Semiconductor materials and interfaces
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Scope of this subject
This cluster of papers focuses on the physics and chemistry of Schottky barrier height, metal-semiconductor contacts, thin film reactions, barrier height inhomogeneities, nickel silicide technology, epitaxial growth, electrical and dielectric properties, and their applications in solar cells.
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Research vocabulary
GaAs; Schottky diodes; Schottky barrier height; metal-semiconductor interface; ohmic contacts; ideality factor; metal-semiconductor contacts; deep levels; Schottky barrier; barrier height; rapid thermal annealing; capacitance-voltage characteristics; deep level transient spectroscopy; Schottky contacts; nickel silicide; silicide formation; epitaxial layers; n-type silicon; silicon-germanium alloys; misfit dislocations; p-type silicon; AlGaAs; cobalt silicide; titanium silicide; n-type GaAs
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Numeric address and provenance
Morton address: 36253647285430911 · morton4x16-v1
Coordinates: (3, 31, 3107, 11853). The address interleaves categorical identifier bits. Nearby addresses are not guaranteed to describe semantically similar subjects.
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