{"cited_by_count":1992098,"description":"This cluster of papers focuses on the physics and chemistry of Schottky barrier height, metal-semiconductor contacts, thin film reactions, barrier height inhomogeneities, nickel silicide technology, epitaxial growth, electrical and dielectric properties, and their applications in solar cells.","display_name":"Semiconductor materials and interfaces","domain_id":"3","external_ids":{"openalex":"https://openalex.org/T11853","wikipedia":"https://en.wikipedia.org/wiki/Schottky_barrier"},"field_id":"31","id":"T11853","keywords":[{"display_name":"GaAs","id":"gallium-arsenide","score":0.2313,"url":"https://openalex.org/keywords/gallium-arsenide"},{"display_name":"Schottky diodes","id":"schottky-diodes","score":0.3488,"url":"https://openalex.org/keywords/schottky-diodes"},{"display_name":"Schottky barrier height","id":"schottky-barrier-height","score":0.5226,"url":"https://openalex.org/keywords/schottky-barrier-height"},{"display_name":"metal-semiconductor interface","id":"metal-semiconductor-interface","score":0.4518,"url":"https://openalex.org/keywords/metal-semiconductor-interface"},{"display_name":"ohmic contacts","id":"ohmic-contacts","score":0.3245,"url":"https://openalex.org/keywords/ohmic-contacts"},{"display_name":"ideality factor","id":"ideality-factor","score":0.4482,"url":"https://openalex.org/keywords/ideality-factor"},{"display_name":"metal-semiconductor contacts","id":"metal-semiconductor-junction","score":0.5477,"url":"https://openalex.org/keywords/metal-semiconductor-junction"},{"display_name":"deep levels","id":"deep-level-defects","score":0.3028,"url":"https://openalex.org/keywords/deep-level-defects"},{"display_name":"Schottky barrier","id":"schottky-barrier","score":0.2889,"url":"https://openalex.org/keywords/schottky-barrier"},{"display_name":"barrier height","id":"barrier-height","score":0.3156,"url":"https://openalex.org/keywords/barrier-height"},{"display_name":"rapid thermal annealing","id":"rapid-thermal-annealing","score":0.2146,"url":"https://openalex.org/keywords/rapid-thermal-annealing"},{"display_name":"capacitance-voltage characteristics","id":"capacitance-voltage-characteristics","score":0.2002,"url":"https://openalex.org/keywords/capacitance-voltage-characteristics"},{"display_name":"deep level transient spectroscopy","id":"deep-level-transient-spectroscopy","score":0.335,"url":"https://openalex.org/keywords/deep-level-transient-spectroscopy"},{"display_name":"Schottky contacts","id":"schottky-contacts","score":0.2596,"url":"https://openalex.org/keywords/schottky-contacts"},{"display_name":"nickel silicide","id":"nickel-silicide","score":0.5542,"url":"https://openalex.org/keywords/nickel-silicide"},{"display_name":"silicide formation","id":"silicide-formation","score":0.635,"url":"https://openalex.org/keywords/silicide-formation"},{"display_name":"epitaxial layers","id":"epitaxial-layers","score":0.2144,"url":"https://openalex.org/keywords/epitaxial-layers"},{"display_name":"n-type silicon","id":"n-type-silicon","score":0.2594,"url":"https://openalex.org/keywords/n-type-silicon"},{"display_name":"silicon-germanium alloys","id":"silicon-germanium-alloys","score":0.2874,"url":"https://openalex.org/keywords/silicon-germanium-alloys"},{"display_name":"misfit dislocations","id":"misfit-dislocations","score":0.2601,"url":"https://openalex.org/keywords/misfit-dislocations"},{"display_name":"p-type silicon","id":"p-type-silicon","score":0.216,"url":"https://openalex.org/keywords/p-type-silicon"},{"display_name":"AlGaAs","id":"algaas","score":0.2087,"url":"https://openalex.org/keywords/algaas"},{"display_name":"cobalt silicide","id":"cobalt-silicide","score":0.6464,"url":"https://openalex.org/keywords/cobalt-silicide"},{"display_name":"titanium silicide","id":"titanium-silicide","score":0.5354,"url":"https://openalex.org/keywords/titanium-silicide"},{"display_name":"n-type GaAs","id":"n-type-gaas","score":0.501,"url":"https://openalex.org/keywords/n-type-gaas"}],"legacy_keywords":["Schottky Barrier","Metal-Semiconductor Contacts","Semiconductor Physics","Thin Film Reaction","Barrier Height Inhomogeneities","Nickel Silicide","Epitaxial Growth","Electrical Properties","Dielectric Properties","Solar Cells"],"openalex_id":"https://openalex.org/T11853","source_created_date":"2024-01-23T15:27:12","source_updated_date":"2026-10-17T03:02:00","subfield_id":"3107","url":"/topics/T11853","works_api_url":"https://api.openalex.org/works?filter=topics.id:T11853","works_count":161455,"label":"Semiconductor materials and interfaces","provider":"openalex","revision":"f5547811340a057b","taxonomy_revision":"f050b5d4780b1289","title":"Semiconductor materials and interfaces","kind":"topic-directory","aeo_cohort":"topic-directory","catalogue_revision":"f050b5d4780b1289","numeric_address":"36253647285430911","address_version":"morton4x16-v1","coordinates":[3,31,3107,11853],"answer_status":"Directory metadata; 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