Advancements in Semiconductor Devices and Circuit Design
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Scope of this subject
This cluster of papers explores the advancements in nanoelectronics, focusing on topics such as tunnel field-effect transistors, nanowire transistors, CMOS scaling limits, double-gate transistors, strained-silicon technology, quantum transport modeling, junctionless transistors, subthreshold swing, high-performance nanoscale devices, and process variation.
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Research vocabulary
short-channel effects; subthreshold swing; transconductance; threshold voltage; tunnel field-effect transistor; MOSFET; FinFET; device modeling; cutoff frequency; drain-induced barrier lowering; heterojunction bipolar transistors; device simulation; nanoscale transistors; bipolar transistors; device scaling; drive current; compact modeling; double-gate MOSFET; band-to-band tunneling; drain current; TCAD simulation; nMOSFET; strained silicon; ballistic transport; carbon nanotube field-effect transistors
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Numeric address and provenance
Morton address: 36239938698250929 · morton4x16-v1
Coordinates: (3, 22, 2208, 10558). The address interleaves categorical identifier bits. Nearby addresses are not guaranteed to describe semantically similar subjects.
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