GaN-based semiconductor devices and materials
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Scope of this subject
This cluster of papers focuses on the first-principles calculations, properties, and applications of III-nitride semiconductors, particularly Gallium Nitride (GaN) and its alloys. It covers topics such as defects and impurities, band parameters, high-power light-emitting diodes (LEDs), AlGaN/GaN HEMTs, nanowires, UV LEDs, and their applications in solid-state lighting.
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Research vocabulary
GaN; gallium nitride; III-nitride semiconductors; high electron mobility transistors; sapphire substrate; metalorganic chemical vapor deposition; light-emitting diodes; AlGaN/GaN HEMT; AlGaN; AlGaN/GaN heterostructures; aluminum nitride; nitride semiconductors; InGaN; GaN HEMT; crystal quality; GaN thin films; multiple quantum wells; indium nitride; Si(111) substrate; GaN-on-Si; plasma-assisted molecular beam epitaxy; light extraction efficiency; threading dislocations; blue LEDs; internal quantum efficiency
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Morton address: 36112944165692091 · morton4x16-v1
Coordinates: (3, 31, 3104, 10099). The address interleaves categorical identifier bits. Nearby addresses are not guaranteed to describe semantically similar subjects.
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