{"cited_by_count":316432,"description":"This cluster of papers focuses on the development and characterization of low dielectric constant (low-k) materials for microelectronics, with an emphasis on their application in copper metallization and interconnect scaling. The papers cover topics such as electromigration, thin films, plasma processing, diffusion barriers, and the electrical resistivity of nanowires.","display_name":"Copper Interconnects and Reliability","domain_id":"3","external_ids":{"openalex":"https://openalex.org/T11661","wikipedia":"https://en.wikipedia.org/wiki/Low-k_dielectric"},"field_id":"25","id":"T11661","keywords":[{"display_name":"electromigration","id":"electromigration","score":0.4179,"url":"https://openalex.org/keywords/electromigration"},{"display_name":"copper interconnects","id":"copper-interconnects","score":0.614,"url":"https://openalex.org/keywords/copper-interconnects"},{"display_name":"low-k dielectrics","id":"low-k-dielectrics","score":0.532,"url":"https://openalex.org/keywords/low-k-dielectrics"},{"display_name":"interconnect reliability","id":"interconnect-reliability","score":0.4701,"url":"https://openalex.org/keywords/interconnect-reliability"},{"display_name":"copper thin films","id":"copper-thin-films","score":0.2728,"url":"https://openalex.org/keywords/copper-thin-films"},{"display_name":"copper metallization","id":"copper-metallization","score":0.5239,"url":"https://openalex.org/keywords/copper-metallization"},{"display_name":"aluminum interconnects","id":"aluminum-interconnects","score":0.7611,"url":"https://openalex.org/keywords/aluminum-interconnects"},{"display_name":"multilevel interconnects","id":"multilevel-interconnects","score":0.497,"url":"https://openalex.org/keywords/multilevel-interconnects"},{"display_name":"interlayer dielectric","id":"interlayer-dielectric","score":0.4142,"url":"https://openalex.org/keywords/interlayer-dielectric"},{"display_name":"step coverage","id":"step-coverage","score":0.3667,"url":"https://openalex.org/keywords/step-coverage"},{"display_name":"integrated circuit interconnects","id":"integrated-circuit-interconnects","score":0.4865,"url":"https://openalex.org/keywords/integrated-circuit-interconnects"},{"display_name":"ultra low-k dielectrics","id":"ultra-low-k-dielectrics","score":0.7184,"url":"https://openalex.org/keywords/ultra-low-k-dielectrics"},{"display_name":"dual damascene","id":"dual-damascene","score":0.7191,"url":"https://openalex.org/keywords/dual-damascene"},{"display_name":"copper diffusion barrier","id":"copper-diffusion-barrier","score":0.7143,"url":"https://openalex.org/keywords/copper-diffusion-barrier"},{"display_name":"electromigration lifetime","id":"electromigration-lifetime","score":0.8696,"url":"https://openalex.org/keywords/electromigration-lifetime"},{"display_name":"VLSI interconnects","id":"vlsi-interconnects","score":0.3024,"url":"https://openalex.org/keywords/vlsi-interconnects"},{"display_name":"metal interconnects","id":"metal-interconnects","score":0.2882,"url":"https://openalex.org/keywords/metal-interconnects"},{"display_name":"back-end-of-line","id":"back-end-of-line","score":0.335,"url":"https://openalex.org/keywords/back-end-of-line"},{"display_name":"ULSI","id":"ulsi","score":0.2638,"url":"https://openalex.org/keywords/ulsi"},{"display_name":"interconnect metallization","id":"interconnect-metallization","score":0.5965,"url":"https://openalex.org/keywords/interconnect-metallization"},{"display_name":"aluminum metallization","id":"aluminum-metallization","score":0.393,"url":"https://openalex.org/keywords/aluminum-metallization"},{"display_name":"porous low-k dielectrics","id":"porous-low-k-dielectrics","score":0.8297,"url":"https://openalex.org/keywords/porous-low-k-dielectrics"},{"display_name":"integrated circuit metallization","id":"integrated-circuit-metallization","score":0.718,"url":"https://openalex.org/keywords/integrated-circuit-metallization"},{"display_name":"intermetal dielectric","id":"intermetal-dielectric","score":0.6782,"url":"https://openalex.org/keywords/intermetal-dielectric"},{"display_name":"stress migration","id":"stress-migration","score":0.597,"url":"https://openalex.org/keywords/stress-migration"}],"legacy_keywords":["Low-k Dielectrics","Microelectronics","Electromigration","Copper Metallization","Interconnect Scaling","Thin Films","Electrical Resistivity","Plasma Processing","Diffusion Barriers","Nanowires"],"openalex_id":"https://openalex.org/T11661","source_created_date":"2024-01-23T15:27:11","source_updated_date":"2026-10-17T03:02:00","subfield_id":"2504","url":"/topics/T11661","works_api_url":"https://api.openalex.org/works?filter=topics.id:T11661","works_count":30083,"label":"Copper Interconnects and Reliability","provider":"openalex","revision":"9cd82b9b02dfa599","taxonomy_revision":"f050b5d4780b1289","title":"Copper Interconnects and Reliability","kind":"topic-directory","aeo_cohort":"topic-directory","catalogue_revision":"f050b5d4780b1289","numeric_address":"36248754172651547","address_version":"morton4x16-v1","coordinates":[3,25,2504,11661],"answer_status":"Directory metadata; local answer requires separate source review","truth_status":"Subject descriptor, not a factual answer or a demonstrated knowledge gap","reviewed_answer":null}