{"cited_by_count":1540445,"description":"This cluster of papers focuses on the advances in atomic layer deposition (ALD) technology, particularly in the context of high-k dielectrics, gate oxides, and semiconductor devices. It covers topics such as thin film growth, dielectric breakdown mechanisms, metal gate transistors, interface engineering, and the impact of negative bias temperature instability (NBTI) degradation on device performance.","display_name":"Semiconductor materials and devices","domain_id":"3","external_ids":{"openalex":"https://openalex.org/T10472","wikipedia":"https://en.wikipedia.org/wiki/Atomic_layer_deposition"},"field_id":"22","id":"T10472","keywords":[{"display_name":"high-k dielectrics","id":"high-k-dielectrics","score":0.5903,"url":"https://openalex.org/keywords/high-k-dielectrics"},{"display_name":"atomic layer deposition","id":"atomic-layer-deposition","score":0.3043,"url":"https://openalex.org/keywords/atomic-layer-deposition"},{"display_name":"hafnium oxide","id":"hafnium-oxide","score":0.3512,"url":"https://openalex.org/keywords/hafnium-oxide"},{"display_name":"gate dielectric","id":"gate-dielectric","score":0.4824,"url":"https://openalex.org/keywords/gate-dielectric"},{"display_name":"Si/SiO2 interface","id":"si-sio2-interface","score":0.5508,"url":"https://openalex.org/keywords/si-sio2-interface"},{"display_name":"interface states","id":"interface-states","score":0.3132,"url":"https://openalex.org/keywords/interface-states"},{"display_name":"MOS capacitors","id":"mos-capacitors","score":0.6046,"url":"https://openalex.org/keywords/mos-capacitors"},{"display_name":"high-k gate dielectrics","id":"high-k-gate-dielectrics","score":0.622,"url":"https://openalex.org/keywords/high-k-gate-dielectrics"},{"display_name":"charge trapping","id":"charge-trapping","score":0.2037,"url":"https://openalex.org/keywords/charge-trapping"},{"display_name":"MOSFET","id":"mosfet","score":0.2344,"url":"https://openalex.org/keywords/mosfet"},{"display_name":"capacitance-voltage characteristics","id":"capacitance-voltage-characteristics","score":0.2478,"url":"https://openalex.org/keywords/capacitance-voltage-characteristics"},{"display_name":"SiO2 thin films","id":"silicon-dioxide-thin-films","score":0.3064,"url":"https://openalex.org/keywords/silicon-dioxide-thin-films"},{"display_name":"threshold voltage shift","id":"threshold-voltage-shift","score":0.2093,"url":"https://openalex.org/keywords/threshold-voltage-shift"},{"display_name":"interface state density","id":"interface-state-density","score":0.4857,"url":"https://openalex.org/keywords/interface-state-density"},{"display_name":"MOS structures","id":"mos-structures","score":0.558,"url":"https://openalex.org/keywords/mos-structures"},{"display_name":"equivalent oxide thickness","id":"equivalent-oxide-thickness","score":0.7972,"url":"https://openalex.org/keywords/equivalent-oxide-thickness"},{"display_name":"interface trap density","id":"interface-trap-density","score":0.4981,"url":"https://openalex.org/keywords/interface-trap-density"},{"display_name":"negative bias temperature instability","id":"negative-bias-temperature-instability","score":0.5683,"url":"https://openalex.org/keywords/negative-bias-temperature-instability"},{"display_name":"hot carrier degradation","id":"hot-carrier-degradation","score":0.561,"url":"https://openalex.org/keywords/hot-carrier-degradation"},{"display_name":"gate leakage current","id":"gate-leakage-current","score":0.2716,"url":"https://openalex.org/keywords/gate-leakage-current"},{"display_name":"MOS devices","id":"metal-oxide-semiconductor-devices","score":0.5392,"url":"https://openalex.org/keywords/metal-oxide-semiconductor-devices"},{"display_name":"Al2O3 thin films","id":"aluminum-oxide-thin-films","score":0.294,"url":"https://openalex.org/keywords/aluminum-oxide-thin-films"},{"display_name":"post-deposition annealing","id":"post-deposition-annealing","score":0.2032,"url":"https://openalex.org/keywords/post-deposition-annealing"},{"display_name":"nMOSFET","id":"n-mosfet","score":0.3727,"url":"https://openalex.org/keywords/n-mosfet"},{"display_name":"metal gate","id":"metal-gate","score":0.4855,"url":"https://openalex.org/keywords/metal-gate"}],"legacy_keywords":["Atomic Layer Deposition","High-k Dielectrics","Gate Oxides","Semiconductor Devices","Nanoelectronics","Thin Film Growth","Dielectric Breakdown","Metal Gate Transistors","Interface Engineering","NBTI Degradation"],"openalex_id":"https://openalex.org/T10472","source_created_date":"2024-01-23T15:27:06","source_updated_date":"2026-10-17T03:02:00","subfield_id":"2208","url":"/topics/T10472","works_api_url":"https://api.openalex.org/works?filter=topics.id:T10472","works_count":142726,"label":"Semiconductor materials and devices","provider":"openalex","revision":"2652deef3ca07bef","taxonomy_revision":"f050b5d4780b1289","title":"Semiconductor materials and devices","kind":"topic-directory","aeo_cohort":"topic-directory","catalogue_revision":"f050b5d4780b1289","numeric_address":"36239906619687473","address_version":"morton4x16-v1","coordinates":[3,22,2208,10472],"answer_status":"Directory metadata; local answer requires separate source review","truth_status":"Subject descriptor, not a factual answer or a demonstrated knowledge gap","reviewed_answer":null}