{"id":"S90002217","label":"Modulation-doped field-effect transistors","description":"","source_url":"https://id.loc.gov/authorities/subjects/sh90002217","normalized_label":"modulation-doped field-effect transistors","broader":["http://id.loc.gov/authorities/subjects/sh85048099"],"aliases":["HEMTs (Transistors)","HFETs (Transistors)","Hetero-field-effect transistors","High-electron-mobility transistors","MODFETs (Transistors)","SDHTs (Transistors)","Selectively-doped heterojunction transistors","TEGFETs (Transistors)","Two-dimensional electron gas field-effect transistors"],"source_identifier":"http://id.loc.gov/authorities/subjects/sh90002217","provider":"lcsh","revision":"f53101b84e2fb4ee","taxonomy_revision":"f050b5d4780b1289","title":"Modulation-doped field-effect transistors","url":"/topics/S90002217","kind":"topic-directory","aeo_cohort":"topic-directory","catalogue_revision":"f050b5d4780b1289","numeric_address":"9566784719828436482","address_version":"morton4x16-v1","coordinates":[0,21,30028,41984],"answer_status":"Directory metadata; local answer requires separate source review","truth_status":"Subject descriptor, not a factual answer or a demonstrated knowledge gap","reviewed_answer":null}